Depth profiling of a Co-implanted silicon wafer by total-reflection X-ray fluorescence analysis after repeated oxidation and HF-etching
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Analytical Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/1999/AC/A809804B
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface and Thin-Film Analysis, 4 Photon Detection;Ullmann's Encyclopedia of Industrial Chemistry;2011-10-15
2. Total-Reflection X-Ray Fluorescence (TXRF) Analysis;Surface and Thin Film Analysis;2011-04-12
3. Total reflection X-ray fluorescence and grazing incidence X-ray spectrometry — Tools for micro- and surface analysis. A review;Spectrochimica Acta Part B: Atomic Spectroscopy;2009-09
4. Parasitic ion-implantation produced by a Kaufman-type ion source used for planar etching of surfaces;Analytical and Bioanalytical Chemistry;2005-07-21
5. A broad beam ion source used for planar sputter-etching of shallow layers from flat samples and determination of their mass density;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-03
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