Key scattering mechanisms for holes in strained SiGe/Ge/SiGe square quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3039214
Reference44 articles.
1. High-mobility Si and Ge structures
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3. Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
4. Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping
5. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
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1. Temperature-dependent transport properties of two-dimensional hole gas in Ge channel modulation-doped square quantum wells;Journal of Physics: Conference Series;2020-03-01
2. Mobility of carrier in the single-side and double-side doped square quantum wells;The European Physical Journal B;2017-06
3. The main scattering mechanisms in Single-side modulation doped square quantum wells;Journal of Physics: Conference Series;2017-06
4. Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures;Applied Physics Letters;2012-05-28
5. Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells;Journal of the Physical Society of Japan;2011-04-15
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