Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4723690
Reference26 articles.
1. Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures
2. High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures
3. Temperature dependence of transport properties of high mobility holes in Ge quantum wells
4. Theoretical hole mobility in a narrow Si/SiGe quantum well
5. Mobility spectrum computational analysis using a maximum entropy approach
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