Theoretical hole mobility in a narrow Si/SiGe quantum well
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.10515/fulltext
Reference56 articles.
1. A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices
2. Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures
3. Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS
4. Hole transport theory in pseudomorphicSi1−xGexalloys grown on Si(001) substrates
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