The effect of vacancy defects on the conductive properties of SiGe
Author:
Funder
National Key R&D Plan of China
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference47 articles.
1. Strained Si, Ge, and Si1−xGex alloys modeled with a first-principles-optimized full-zone k⋅p method;Rideau;Phys. Rev. B, Condens. Matter Mater. Phys.,2006
2. First-principles study of Si34−xGex clathrates: direct wide-gap semiconductors in Si-Ge alloys;Moriguchi;Phys. Rev. B,2000
3. Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates;Nützel;J. Cryst. Growth,1995
4. Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures;Tanaka,2012
5. Homoepitaxy of Ge on ozone-treated Ge(1 0 0) substrate by ultra-high vacuum chemical vapor deposition;Wang;J. Cryst. Growth,2019
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