Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition-Reference-Cited by-同舟云学术

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Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

Published:2019-02 Issue: Volume:507 Page:113-117
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Jiaqi,Shen Limeng,Lin Guangyang,Wang Jianyuan,Xu Jianfang,Chen Songyan,Xiang Gang,Li Cheng^ORCID

Funder

National Natural Science Foundation of China

Educational Research Projects for Young and Middle-aged Teachers in Fujian

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. High performance germanium MOSFETs;Saraswat;Mater. Sci. Eng., B,2006

2. 30 GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide;Feng;Opt. Exp.,2011

3. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide;Feng;Appl. Phys. Lett.,2009

4. A study of the influence of typical wet chemical treatments on the germanium wafer surface;Onsia;Solid State Phenom.,2005

5. Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth;Moriyama;Appl. Surf. Sci.,2006

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2. The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy;Journal of Crystal Growth;2023-01

3. Mn-doped SiGe thin films grown by UHV/CVD with room-temperature ferromagnetism and high hole mobility;Science China Materials;2022-04-14

4. The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy;SSRN Electronic Journal;2022

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