The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy-Reference-Cited by-同舟云学术

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The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy

Published:2023-01 Issue: Volume:601 Page:126954
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Qian Kun,An Yuying,Cai Hongjie,Yang Kaisen,Qian Jinhui,Ding Haokun,Lin Guangyang,Wang Jianyuan,Xu Jianfang,Huang Wei,Chen Songyan,Li Cheng

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

National Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. The electronic band structure of Ge1-xSnx in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein-moss effect;Polak;J. Phys. D: Appl. Phys.,2017

2. Electronic band structure of compressively strained Ge1-xSnx with x;Zelazna;Appl. Phys. Lett.,2015

3. Achieving direct band gap in germanium through integration of Sn alloying and external strain;Gupta;J. Appl. Phys.,2013

4. Gamma bandgap determi-nation in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content;Gassenq;Appl. Phys. Lett.,2016

5. Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx;Du;Appl. Phys. Lett.,2014

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain-Mediated Sn Incorporation and Segregation in Compositionally Graded Ge_1–xSn_x Epilayers Grown by MBE at Different Temperatures;Crystal Growth & Design;2023-10-16

2. Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering;Applied Surface Science;2023-06

3. Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature;Journal of Physics D: Applied Physics;2023-05-30

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