Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance-Reference-Cited by-同舟云学术

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Electronic band structure of compressively strained Ge1−xSnx with x < 0.11 studied by contactless electroreflectance

Published:2015-04-06 Issue:14 Volume:106 Page:142102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zelazna K.¹,Polak M. P.¹^ORCID,Scharoch P.¹,Serafinczuk J.²,Gladysiewicz M.¹,Misiewicz J.¹,Dekoster J.³,Kudrawiec R.¹

Affiliation:

1. Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wrocław, Poland

2. Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

3. IMEC, Kapeldreef 75, 3001 Heverlee, Belgium

Funder

Narodowe Centrum Nauki (National Science Centre)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4917236

Reference29 articles.

1. Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices

2. Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

3. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy

4. Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

5. Possibility of increased mobility in Ge-Sn alloy system

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1. The transition of growth behaviors of moderate Sn fraction Ge1-xSnx (8 % < x < 15 %) epilayers with low temperature molecular beam epitaxy;Journal of Crystal Growth;2023-01

2. Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting;Journal of Physics: Condensed Matter;2022-12-14

3. Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures;Advanced Materials;2021-05-25

4. Electronic band structure of semiconductor alloys: From ab initio to k·p via computational alchemy, on example of Ge1-xSnx alloy;Computational Materials Science;2021-02

5. Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1−xSnx/Ge Heterostructures;Physical Review Applied;2020-12-23

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