Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx-Reference-Cited by-同舟云学术

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Published:2014-08-04 Issue:5 Volume:105 Page:051104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Du Wei¹,Ghetmiri Seyed A.¹,Conley Benjamin R.¹,Mosleh Aboozar¹,Nazzal Amjad²,Soref Richard A.³,Sun Greg³,Tolle John⁴,Margetis Joe⁴,Naseem Hameed A.¹,Yu Shui-Qing¹

Affiliation:

1. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

2. Electrical Engineering and Physics Department, Wilkes University, Wilkes-Barre, Pennsylvania 18766, USA

3. Department of Physics, University of Massachusetts Boston, Boston, Massachusetts 02125, USA

4. ASM, 3440 East University Drive, Phoenix, Arizona 85034, USA

Funder

Air Force Office of Scientific Research (AFOSR)

Defense Advanced Research Projects Agency (DARPA)

Office of Experimental Program to Stimulate Competitive Research (EPSCoR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4892302

Reference24 articles.

1. Silicon-based optoelectronics

2. Photoluminescence spectra of germanium at high excitation intensities

3. Direct gap recombination in germanium at high excitation level and low temperature

4. Enhanced photoluminescence of heavily n-doped germanium

5. Direct band gap narrowing in highly doped Ge

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