Direct band gap narrowing in highly doped Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4802199
Reference19 articles.
1. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
2. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
3. High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates
4. High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates
5. Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
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