The growth of Ge and direct bandgap Ge1−xSnx on GaAs (001) by molecular beam epitaxy-Reference-Cited by-同舟云学术

The growth of Ge and direct bandgap Ge_1−xSn_x on GaAs (001) by molecular beam epitaxy

Published:2024 Issue:2 Volume:14 Page:1250-1257
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Gunder Calbi¹^ORCID,Maia de Oliveira Fernando²^ORCID,Wangila Emmanuel¹,Stanchu Hryhorii²,Zamani-Alavijeh Mohammad³,Ojo Solomon¹,Acharya Sudip¹,Said Abdulla¹,Li Chen²,Mazur Yuriy I.²,Yu Shui-Qing²⁴,Salamo Gregory J.²³

Affiliation:

1. Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

2. Institute of Nanoscience & Engineering, University of Arkansas, Fayetteville, AR 72701, USA

3. Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA

4. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA

Abstract

Germanium tin (GeSn) is a tuneable narrow bandgap material, which has shown remarkable promise for the industry of near- and mid-infrared technologies for high efficiency photodetectors and laser devices.

Funder

Office of Naval Research

University of Arkansas

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D3RA06774B

Reference28 articles.

1. Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy

2. Highly strained Ge1-xSnx alloy films with high Sn compositions grown by MBE

3. I. A.Fischer , M.Oehme and J.Schulze , in Molecular Beam Epitaxy , Elsevier , 2018 , pp. 55–71

4. (Invited) MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices

5. Possibility of increased mobility in Ge-Sn alloy system

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