(Invited) MBE Growth of GeSn and SiGeSn Heterojunctions for Photonic Devices

Abstract

Strained Ge and GeSn are potentially direct bandgap Group IV materials suitable for photonic devices. We have grown both Ge and GeSn with controlled degrees of strain and GeSn/SiGeSn heterojunctions by low temperature MBE which demonstrate high quality and excellent optical properties, including stimulated emission. Gain calculations show that quantum wells of either strained Ge or GeSn that are direct bandgap provide gain comparable to III-V materials and will produce useful, low threshold lasers for on-chip optical communications