GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation-Reference-Cited by-同舟云学术

GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

Published:2024 Issue:14 Volume:16 Page:7225-7236
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Karthikeyan Sengunthar¹^ORCID,Johnston Steven W.²^ORCID,Gayakwad Dhammapriy³^ORCID,Mahapatra Suddhasatta³,Bodnar Robert J.⁴^ORCID,Zhao Jing⁴,Joshi Rutwik¹^ORCID,Hudait Mantu K.¹^ORCID

Affiliation:

1. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, USA

2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

3. Physics Department, Indian Institute of Technology Bombay, Mumbai 400076, India

4. Fluids Research Laboratory, Department of Geosciences, Virginia Tech, Blacksburg, Virginia 24061, USA

Abstract

Microwave reflection photoconductive decay carrier lifetimes of Ge0.94Sn0.06 materials on oriented GaAs substrates at 300 K.

Funder

Division of Electrical, Communications and Cyber Systems

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR05904A

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