High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate-Reference-Cited by-同舟云学术

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High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

Published:2019-02-14 Issue:4 Volume:27 Page:5798
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Xu Shengqiang,Wang Wei,Huang Yi-Chiau,Dong Yuan,Masudy-Panah Saeid,Wang Hong,Gong Xiao,Yeo Yee-Chia

Funder

Ministry of Education - Singapore

National University of Singapore

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference50 articles.

1. Space-division multiplexing in optical fibres

2. Ultimate low loss of hollow-core photonic crystal fibres

3. Science and technology challenges in XXIst century optical communications

4. Ultra-low-loss (0.1484 dB∕km) pure silica core fibre and extension of transmission distance

5. High-speed silicon modulators for the 2 μm wavelength band

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1. Design of Mid-Infrared Ge_1-xSn_x/Ge Heterojunction Photodetectors on GeSnOI Platform With a Bandwidth Exceeding 100 GHz;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates;Journal of Vacuum Science & Technology B;2024-08-20

3. GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting;Journal of Vacuum Science & Technology B;2024-07-01

4. Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range;Applied Surface Science;2024-06

5. Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling;Journal of Vacuum Science & Technology B;2024-05-01

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