Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications-Reference-Cited by-同舟云学术

Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

Published:2019-10-02 Issue:11 Volume:6 Page:2807-2815
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Tran Huong¹²,Pham Thach¹²,Margetis Joe³,Zhou Yiyin¹²⁴,Dou Wei¹,Grant Perry C.¹²⁴,Grant Joshua M.¹⁴,Al-Kabi Sattar¹⁴,Sun Greg⁵^ORCID,Soref Richard A.⁵,Tolle John³,Zhang Yong-Hang⁶,Du Wei⁷^ORCID,Li Baohua²,Mortazavi Mansour⁸,Yu Shui-Qing¹

Affiliation:

1. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

2. Arktonics, LLC, 1339 South Pinnacle Drive, Fayetteville, Arkansas 72701, United States

3. ASM, 3440 East University Drive, Phoenix, Arizona 85034, United States

4. Microelectonics-Photonics Program, University of Arkansas, Fayetteville, Arkansas 72701, United States

5. Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, United States

6. Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287, United States

7. Department of Electrical Engineering, Wilkes University, Wilkes-Barre, Pennsylvania 18766, United States

8. Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, Arkansas 71601, United States

Funder

Air Force Office of Scientific Research

National Aeronautics and Space Administration

Wilkes University

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.9b00845

Reference44 articles.

1. Group IV Photonics: Driving Integrated Optoelectronics

2. Infrared Detectors

3. The rise of the GeSn laser

4. Novel integration technique for silicon/III-V hybrid laser

5. Lasing in direct-bandgap GeSn alloy grown on Si

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