Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm
Author:
Nguyen Thi Hao Nhi1ORCID, Turpaud Victor1, Koompai Natnicha1, Peltier Jonathan1, Calcaterra Stefano2, Isella Giovanni2, Coudevylle Jean-René1, Alonso-Ramos Carlos1, Vivien Laurent1, Frigerio Jacopo2, Marris-Morini Delphine1
Affiliation:
1. Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies , 91120 Palaiseau , France 2. L-NESS, Dipartimento di Fisica , Politechnico di Milano , Polo di Como, Via Anzani 42, 22100 Como , Italy
Abstract
Abstract
This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regime. High speed operation is obtained, up to 1.5 GHz. Furthermore, the device can also operate as an integrated photodetector. Photodetection has thus been characterized from 5.2 µm to 10 µm wavelengths showing an internal responsivity around 1 mA/W, and a 3 dB electro-optical bandwidth of 32 MHz. These results show a significant advancement in integrated photodetectors and electro-optical modulators for mid-infrared spectroscopy.
Funder
ANR Light-up Project ERC-Electrophot Fondazione Cariplo
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
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