Increasing Internet Bandwidth for IoT with Silicon Photonics Enabled by GeSn Alloys
Author:
Affiliation:
1. University of North Carolina at Charlotte,Department of Physics and Optical Science,Charlotte,NC,USA
Funder
Air Force Office of Scientific Research
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10374477/10374486/10374782.pdf?arnumber=10374782
Reference14 articles.
1. Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate
2. Compositional dependence of the direct and indirect band gaps in Ge1−ySnyalloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic andn-type materials
3. High performance Ge0.89Sn0.11photodiodes for low-cost shortwave infrared imaging
4. Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
5. Group IV Photonics: Driving Integrated Optoelectronics
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