Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells-Reference-Cited by-同舟云学术

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Two-Side Doping Effects on the Mobility of Carriers in Square Quantum Wells

Published:2011-04-15 Issue:4 Volume:80 Page:044714
ISSN:0031-9015
Container-title:Journal of the Physical Society of Japan
language:en
Short-container-title:J. Phys. Soc. Jpn.

Author:

Nhat Quang Doan¹²,Huyen Tung Nguyen³,Trung Hong Nguyen³,Thi Hai Tran⁴

Affiliation:

1. Institute of Physics, Vietnamese Academy of Science and Technology, 10 Dao Tan Street, Hanoi, Vietnam

2. University of Technology and Management, N3 Ho Tung Mau Road, Hanoi, Vietnam

3. Institute of Engineering Physics, Hanoi University of Technology, 1 Dai Co Viet Road, Hanoi, Vietnam

4. Department of Natural Science, Hong Duc University, 307 Le Lai Street, Thanh Hoa City, Vietnam

Publisher

Physical Society of Japan

Subject

General Physics and Astronomy

Link

http://journals.jps.jp/doi/pdf/10.1143/JPSJ.80.044714

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility of carrier in the single-side and double-side doped square quantum wells;The European Physical Journal B;2017-06

2. A novel approach to the evaluation of the interface roughness scattering form factor in intersubband transitions;Journal of the Korean Physical Society;2014-06

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