Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates-Reference-Cited by-同舟云学术

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Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates

Published:2004-04-12 Issue:15 Volume:84 Page:2829-2831
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsujino S.,Falub C. V.,Müller E.,Scheinert M.,Diehl L.,Gennser U.,Fromherz T.,Borak A.,Sigg H.,Grützmacher D.,Campidelli Y.,Kermarrec O.,Bensahel D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1695102

Reference18 articles.

1. Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

2. Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate

3. Resonant tunneling in Si–SiGe superlattices on relaxed buffer substrates

4. High-mobility Si and Ge structures

5. Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications

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1. Barrier penetration and screening effects on hole mobility and thermopower in a Si/Si1-xGex/Si finite square quantum well;Indian Journal of Physics;2023-03-24

2. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers;Semiconductors;2013-03

3. Electrical properties of rolled-up p-type Si/SiGe heterostructures;Applied Physics Letters;2011-05-09

4. The progress towards terahertz quantum cascade lasers on silicon substrates;Laser & Photonics Reviews;2010-06-07

5. Analysis of Photocurrent Spectra of SiGe/Si Quantum-Well Solar Cell;IEEE Transactions on Nanotechnology;2010-03

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