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Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

  • Published:2002-12-16 Issue:25 Volume:81 Page:4700-4702
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Diehl L.,Menteşe S.,Müller E.,Grützmacher D.,Sigg H.,Gennser U.,Sagnes I.,Campidelli Y.,Kermarrec O.,Bensahel D.,Faist J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 88 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-infrared (λ ∼ 1.2 μm) intersubband electroluminescence in Si/CaF2 quantum cascade structures;Japanese Journal of Applied Physics;2023-07-01

2. Design and Analysis of Si/CaF<sub>2</sub> Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics;IEICE Transactions on Electronics;2023-05-01

3. Terahertz Quantum Cascade Lasers;Fundamentals of Terahertz Devices and Applications;2021-07-12

4. Room temperature near-infrared electroluminescence of Si/CaF2 quantum cascade laser structures grown on an SOI substrate;Japanese Journal of Applied Physics;2021-03-16

5. Terahertz intersubband electroluminescence from ZnO quantum cascade structures;2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2020-11-08
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