Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference38 articles.
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1. Transport properties of silicon–germanium (SiGe) nanostructures and applications in devices;Silicon–Germanium (SiGe) Nanostructures;2011
2. Low-temperature mobility of holes inSi∕SiGep-channel heterostructures;Physical Review B;2004-11-23
3. Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates;Applied Physics Letters;2004-04-12
4. Artificial GeSi substrates for heteroepitaxy: Achievements and problems;Semiconductors;2003-05
5. Structural characterization of Si1 − x Gex ultrathin quantum wells in a Si matrix by high-resolution X-ray diffraction;Crystallography Reports;2002-11
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