Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers-Reference-Cited by-同舟云学术

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Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

Published:2013-03 Issue:3 Volume:47 Page:427-432
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Shaleev M. V.,Novikov A. V.,Yurasov D. V.,Hartmann J. M.,Kuznetsov O. A.,Lobanov D. N.,Krasilnik Z. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261303024X.pdf

Reference27 articles.

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2. S. Tsujino, C. V. Falub, E. Müller, M. Scheinert, L. Diehl, U. Gennser, T. Fromherz, A. Borak, H. Sigg, D. Grützmacher, Y. Campidelli, O. Kermarrec, and D. Bensahel, Appl. Phys. Lett. 84, 2829 (2004).

3. N. Usami, F. Issiki, D. K. Nayak, Y. Shiraki, and S. Fukatsu, Appl. Phys. Lett. 67, 524 (1995).

4. S. Gupta, M. L. Lee, and E. A. Fitzgerald, Appl. Phys. Lett. 86, 192104 (2005).

5. Y. Bogumilowicz, J. M. Hartmann, N. Cherkashin, A. Claverie, G. Rolland, and T. Billon, Mater. Sci. Eng. B 124–125, 113 (2005).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure, microhardness and thermal conducting properties of the high-pressure high-temperature-treated Al–Ti–N materials;Applied Physics A;2019-01-23

2. Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates;Journal of Crystal Growth;2017-01

3. Elemental two-dimensional nanosheets beyond graphene;Chemical Society Reviews;2017

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