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Resonant tunneling in Si–SiGe superlattices on relaxed buffer substrates

  • Published:2004-03 Issue:1-4 Volume:224 Page:377-381
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Tsujino S.,Mentese S.,Diehl L.,Müller E.,Haas B.,Bächle D.,Stutz S.,Grützmacher D.,Campidelli Y.,Kermarrec O.,Bensahel D.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical gain of two-dimensional hole gas by intersubband Raman transitions;Journal of Applied Physics;2012-07-15

2. Resonant Tunneling Devices;Silicon Heterostructure Devices;2007-12-13

3. Toward Silicon-Based Lasers for Terahertz Sources;IEEE Journal of Selected Topics in Quantum Electronics;2006-11

4. Resonant Tunneling Devices;Silicon Heterostructure Handbook;2005-11

5. Hall mobility of narrow Si0.2Ge0.8–Si quantum wells on Si0.5Ge0.5 relaxed buffer substrates;Applied Physics Letters;2004-04-12
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