Oxygen diffusion in β-Ga2O3 single crystals at high temperatures-Reference-Cited by-同舟云学术

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Oxygen diffusion in β-Ga2O3 single crystals at high temperatures

Published:2021-12-13 Issue:24 Volume:119 Page:242106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Uhlendorf Johanna¹,Galazka Zbigniew²^ORCID,Schmidt Harald¹³^ORCID

Affiliation:

1. Technische Universität Clausthal, Institut für Metallurgie, AG Festkörperkinetik, 38678 Clausthal-Zellerfeld, Germany

2. Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany

3. Clausthaler Zentrum für Materialtechnik, Technische Universität Clausthal, 38678 Clausthal-Zellerfeld, Germany

Funder

Deutsche Forschungsgemeinschaft

Leibniz Association Germany, GraFOx, a Leibniz-Science Campus

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0071729

Reference40 articles.

1. Experimental electronic structure of In2O3and Ga2O3

2. Migration mechanisms and diffusion barriers of vacancies in Ga2O3

3. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS

4. A review of Ga2O3materials, processing, and devices

5. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3

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2. Engineering Charge Separation in α-Ga₂O₃ Nanorod Arrays for Photoelectrochemical UV Detection;ACS Applied Nano Materials;2024-07-09

3. Oxygen diffusion in β-Ga₂O₃ single crystals under different oxygen partial pressures at 1375 °C;Zeitschrift für Naturforschung B;2024-04-01

4. Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO_x;Advanced Materials Interfaces;2023-12

5. Oxygen and aluminum tracer diffusion in (−201) oriented β−Ga2O3 single crystals;Physical Review Materials;2023-09-29

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