Oxygen diffusion in β-Ga2O3 single crystals under different oxygen partial pressures at 1375 °C
Author:
Uhlendorf Johanna1, Schmidt Harald12
Affiliation:
1. Institut für Metallurgie , Technische Universität Clausthal , AG Festkörperkinetik, 38678 Clausthal-Zellerfeld , Germany 2. Clausthaler Zentrum für Materialtechnik , Technische Universität Clausthal , 38678 Clausthal-Zellerfeld , Germany
Abstract
Abstract
The monoclinic β-polymorph of gallium oxide is a semiconductor with an ultra-wide bandgap. It is becoming increasingly significant for various technological applications. We have investigated the tracer self-diffusion of oxygen in β-Ga2O3 single crystals as a function of the oxygen partial pressure (2, 20 and 200 mbar) at a temperature of 1375 °C. Isotopically enriched 18O2 gas was used as a tracer source and secondary ion mass spectrometry to analyze depth profiles. We observed that, with decreasing oxygen partial pressure, the diffusivities at a given temperature increase significantly. We suggest that this behaviour can be explained by a change in the diffusion mechanism from oxygen interstitials to oxygen vacancies.
Publisher
Walter de Gruyter GmbH
Reference25 articles.
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