Oxygen and aluminum tracer diffusion in (−201) oriented β−Ga2O3 single crystals
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.7.093402/fulltext
Reference42 articles.
1. Experimental electronic structure of In2O3and Ga2O3
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4. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS
5. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3;APL Materials;2024-08-01
2. Oxygen diffusion in β-Ga2O3 single crystals under different oxygen partial pressures at 1375 °C;Zeitschrift für Naturforschung B;2024-04-01
3. High-quality β-(AlxGa1−x)2O3 thin films on sapphire substrates by face-to-face annealing;CrystEngComm;2024
4. Oxygen and aluminum tracer diffusion in (−201) oriented β−Ga2O3 single crystals;Physical Review Materials;2023-09-29
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