Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis-Reference-Cited by-同舟云学术

Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Published:2014-08-11 Issue:6 Volume:105 Page:062109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kao Tsung-Hsien,Chang Shoou-Jinn,Fang Yean-Kuen,Huang Po-Chin,Lai Chien-Ming,Hsu Chia-Wei,Chen Yi-Wen,Cheng Osbert,Wu Chung-Yi,Wu San-Lein

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4893445

Reference13 articles.

1. Comparison of Low-Frequency Noise in Channel and Gate-Induced Drain Leakage Currents of High-$k$ nFETs

2. Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

3. Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise

4. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges

5. Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study;Advanced Functional Materials;2021-04-23

2. Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs;Journal of Nanoelectronics and Optoelectronics;2018-04-01

3. Impact device processing and scaling on RTS;Random Telegraph Signals in Semiconductor Devices;2017