Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise-Reference-Cited by-同舟云学术

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Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise

Published:2013-02 Issue:2 Volume:34 Page:151-153
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Bo Chin,Wu San Lein,Lu Yu Ying,Chang Shoou Jinn,Chen Jone Fang,Tsai Shih Chang,Hsu Che Hua,Yang Chih Wei,Chen Cheng Guo,Cheng Osbert,Huang Po Chin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6417986/06392853.pdf?arnumber=6392853

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs;IEEE Transactions on Electron Devices;2023-03

2. Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO₂ interface;Journal of Physics D: Applied Physics;2023-02-16

3. Low-frequency noise in downscaled silicon transistors: Trends, theory and practice;Physics Reports;2022-12

4. Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy Techniques;Noise in Nanoscale Semiconductor Devices;2020

5. Investigation on noise performance of InAsxSb1−x MOSFETs with compositional variations;Microsystem Technologies;2019-09-27

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