Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
2. School of Information Science and Technology, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10053598/10017164.pdf?arnumber=10017164
Reference45 articles.
1. Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates
2. 1/f noise sources
3. Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET
4. Improving Low-Frequency Noise in 14-nm FinFET by Optimized High-k/Metal Gate Thermal Processing
5. Impact of the Metal Gate on Carrier Transport in HK/MG Transistors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration;Materials Science in Semiconductor Processing;2024-06
2. Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology;IEEE Transactions on Electron Devices;2024-04
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