Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study-Reference-Cited by-同舟云学术

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Published:2021-04-23 Issue:27 Volume:31 Page:2102172
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Li Xuehua¹,Zanotti Tommaso²,Wang Tao¹,Zhu Kaichen¹³,Puglisi Francesco Maria²,Lanza Mario⁴^ORCID

Affiliation:

1. Institute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nanoscience & Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China

2. Dipartimento di Ingegneria “Enzo Ferrari” Università di Modena e Reggio Emilia Modena 41125 Italy

3. Department of Electronic and Biomedical Engineering Universitat de Barcelona Martí i Franquès 1 Barcelona E‐08028 Spain

4. Physical Sciences and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia

Funder

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

State Administration of Foreign Experts Affairs

Collaborative Innovation Center of Suzhou Nano Science and Technology

Ministry of Science and Technology of the People's Republic of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202102172

Reference44 articles.

2. The missing memristor found

3. Design of Power- and Variability-Aware Nonvolatile RRAM Cell Using Memristor as a Memory Element

4. Extended abstract: The butterfly PUF protecting IP on every FPGA

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