Electrical activation of silicon coimplanted with nitrogen, phosphorus, or arsenic in semi‐insulating GaAs substrates grown by the liquid encapsulated Czochralski method-Reference-Cited by-同舟云学术

Electrical activation of silicon coimplanted with nitrogen, phosphorus, or arsenic in semi‐insulating GaAs substrates grown by the liquid encapsulated Czochralski method

Published:1988-08-15 Issue:4 Volume:64 Page:1889-1896
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Morrow Richard A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.341739

Reference9 articles.

1. Activation efficiency improvement in Si‐implanted GaAs by P co‐implantation

2. Compensation inn‐type GaAs resulting from nitrogen ion implantation

3. Electrical activation of silicon implanted in semi‐insulating GaAs: Role of boron and the midgap electron trap (EL2)

4. Flaw states in processed GaAs, detected by photoconductive and photo field‐effect techniques

5. Co-Implantation and autocompensation in close contact rapid thermal annealing of Si-implanted GaAs:Cr

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1. Activation of Si implanted in GaAs at high intensity As co-implantation;Vacuum;2001-08

2. Effects of thermal annealing on the optical properties of Er-ion-implanted AlxGa1−xAs layers grown on GaAs substrates;Applied Surface Science;2000-07

3. Compensation for acceptor centers in AlxGa1−xAs layers by Er+-implantation and thermal treatment;Applied Surface Science;1997-09

4. Photoluminescence and activation on SI-GaAs by Si+ implantation and following rapid thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-08

5. Deep levels in nitrogen‐implantedn‐type GaAs;Journal of Applied Physics;1995-09-15