Activation of Si implanted in GaAs at high intensity As co-implantation-Reference-Cited by-同舟云学术

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Activation of Si implanted in GaAs at high intensity As co-implantation

Published:2001-08 Issue:4 Volume:63 Page:491-494
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Akimov A.N,Vlasukova L.A,Bumai Yu.A,Gorupa K.S

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference8 articles.

1. Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+

2. Photoluminescence study of implantation dose and dose-rate dependence of Si doping of GaAs

3. Dual implantation of Si+ + P+ into GaAs

4. Electrical activation of silicon coimplanted with nitrogen, phosphorus, or arsenic in semi‐insulating GaAs substrates grown by the liquid encapsulated Czochralski method

5. Activation efficiency improvement in Si‐implanted GaAs by P co‐implantation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. N-type Doping Strategies for InGaAs;Materials Science in Semiconductor Processing;2017-05

2. WITHDRAWN: N-type doping strategies for InGaAs;Materials Science in Semiconductor Processing;2017-01

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