Activation efficiency improvement in Si‐implanted GaAs by P co‐implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97790
Reference11 articles.
1. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
2. Ion implantation in compound semiconductors–an approach based on solid state theory
3. Crystal growth of completely dislocation-free and striation-free GaAs
4. Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs
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