Ion implantation in compound semiconductors–an approach based on solid state theory
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577308232594
Reference19 articles.
1. Electrical properties of Cd, Zn and S ion-implanted layers in GaAs
2. EFFICIENT DOPING OF GaAs BY Se+ ION IMPLANTATION
3. Properties of ion implanted silicon, sulfur, and carbon in gallium arsenide
4. The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide
5. Harris, J. S. Proc. II International Conference on Ion Implantation in Semiconductors. Garmisch. pp.157
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3. Formation of diluted III–V nitride thin films by N ion implantation;Journal of Applied Physics;2001-09
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