Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1328766
Reference25 articles.
1. Amphoteric native defects in semiconductors
2. Application of the Amphoteric Native Defect Model to Diffusion and Activation of Shallow Impurities in III-V Semiconductors
3. A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds
4. Diffusion, Interface Mixing and Schottky Barrier Formation
5. Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
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