Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.R13337/fulltext
Reference19 articles.
1. Role of native defects in wide-band-gap semiconductors
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3. Compensation ofp-Type Doping in ZnSe: The Role of Impurity-Native Defect Complexes
4. Identification of Vacancy-Impurity Complexes in Highlyn-Type Si
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