Deep levels in nitrogen‐implantedn‐type GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359889
Reference12 articles.
1. Nitrogen pair luminescence in GaAs
2. Excitons bound to nitrogen pairs in GaAs
3. Deep implantation of nitrogen into GaAs for selective three‐dimensional microstructuring
4. Refractory metal nitride rectifying contacts on GaAs
5. Compensation inn‐type GaAs resulting from nitrogen ion implantation
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2. Composition Related Electrical Active Defect States of InGaAs and GaAsN;Advances in Electrical and Electronic Engineering;2017-03-30
3. Comparison of a dominant electron trap in n-type and p-type GaNAs using deep-level transient spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-07
4. Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement;Applied Physics Letters;2005
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