DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions-Reference-Cited by-同舟云学术

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DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions

Published:2018-02 Issue: Volume:74 Page:313-318
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kosa Arpad,Stuchlikova Lubica,Harmatha Ladislav,Kovac Jaroslav,Sciana Beata,Dawidowski Wojciech,Tlaczala Marek

Funder

Grant Agency of the Ministry of Education

Wrocław University of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference28 articles.

1. MOVPE growth of GaAsN: surface study by AFM and optical properties;Auvraya;Mater. Sci. Semicond. Process.,2000

2. Theoretical investigation of GaAsNBi/GaAs materials for optoelectronic applications;Aissat;Mater. Sci. Semicond. Process.,2015

3. N-type doping strategies for InGaAs;Aldridge;Mater. Sci. Semicond. Process.,2017

4. V. Sabnis, H. Yuen, M. Wiemer, High-efficiency multijunction solar cells employing dilute nitrides, in: Proceedings of the 8th International Conference on Concentrating Photovoltaic Systems, CPV-8, AIP Publishing, 2012, pp. 14–19, 〈http://dx.doi.org/10.1063/1.4753823〉.

5. M. Yamaguchi, et al., Intermediate-band solar cells using in-plane ultrahigh density InAs/GaAsSb quantum dot sheets, in: Proceedings of the Photovoltaic Specialists Conference (PVSC), 2012, 〈http://dx.doi.org/10.1109/PVSC.2012.6317565〉.

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1. Influence of Annealing Temperature on Emission and Capture Processes in GaAsN/GaAs Heterostructures;2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM);2022-10-23

2. Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell;Energies;2021-07-31

3. 1 eV GaAsSbN–based solar cells for efficient multi-junction design: Enhanced solar cell performance upon annealing;Solar Energy;2021-06

4. Theoretical study of strained GaNAsBi/GaAs quantum structures for application in infrared range;Materials Science in Semiconductor Processing;2021-04

5. Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics;Materials;2021-02-27

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