Influence of Annealing Temperature on Emission and Capture Processes in GaAsN/GaAs Heterostructures-Reference-Cited by-同舟云学术

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Influence of Annealing Temperature on Emission and Capture Processes in GaAsN/GaAs Heterostructures

Published:2022-10-23 Issue: Volume: Page:
ISSN:
Container-title:2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)
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Author:

Benko Peter¹,Kosa Arpad¹,Matus Matej¹,Dawidowski Wojciech²,Radziewicz Damian²,Sciana Beata²,Stuchlikova Lubica¹

Affiliation:

1. Slovak University of Technology, Institute of Electronics and Photonics,Faculty of Electrical Engineering and Information Technology,Slovakia

2. Wroclaw University of Science and Technology,Faculty of Electronics, Photonics and Microsystem,Department of Microelectronics and Nanotechnology,Wroclaw,Poland,50-372

Funder

Slovak Research and Development Agency

Wroclaw University of Science and Technology subsidy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9966729/9966739/09966749.pdf?arnumber=9966749

Reference7 articles.

1. Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE

2. Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level properties

3. DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions

4. Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

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