MOVPE growth of GaAsN: surface study by AFM and optical properties-Reference-Cited by-同舟云学术

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MOVPE growth of GaAsN: surface study by AFM and optical properties

Published:2000-10 Issue:5-6 Volume:3 Page:505-509
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Auvray L.,Dumont H.,Dazord J.,Monteil Y.,Bouix J.,Bru-Chevallier C.,Grenouillet L.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

2. Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

3. Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition

4. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments

5. Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy

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1. Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics;Applied Surface Science;2022-03

2. Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing;Journal of Crystal Growth;2018-02

3. DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions;Materials Science in Semiconductor Processing;2018-02

4. In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy;Journal of Applied Physics;2010-07

5. Dilute GaAsN and GaInAsN grown by liquid phase epitaxy;Journal of Physics: Conference Series;2010-04-01

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