Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy

Published:1996 Issue: Volume:423 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Kao Y. C.,Broekaert T. P. E.,Liu H. Y.,Tang S.,Ho I. H.,Stringfellow G. B.

Abstract

AbstractIn this paper, we report the MBE growth of high nitrogen content lattice-matched InAs1−xNx (x=0.38) single crystal epitaxial films on GaAs. The nitrogen incorporation is about an order higher than previously reported on other mixed group V nitride alloys. These data are consistent with a nitrogen solubility limit calculation in various III-V binary alloys, which predicts orders of magnitude higher nitrogen incorporation in InAs than any other alloys. InAsN growths were obtained using a modified ECR-MBE system with atomic-nitrogen generated by an ECR plasma source. Improved crystal quality was obtained using a “template” growth technique. An x-ray linewidth of 270 arc-s was achieved on a 0.4 μm thick InAs0.62N0.38/GaAs multi-layer structure. Hall effect data show these InAsN films are semi-metallic.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. Miscibility gaps in quaternary III/V alloys

2. 2. Foxon C. T. , Cheng T. S. , Lacklison D. E. , Novikov S. V. , Johnson D. , Baba-Ali N. , Tansley T. L. , Hooper S. , and Challis L. J. , presented at the 1994 Electronic Materials Conference, Boulder, CO, 1994.

3. 4. Broekaert T. P. E. , Tang S. , Wallace R. M. , Beam E. A. III , Duncan W. M. , Kao Y. C. , and Liu H. Y. , presented at the International Conference on Integrated Micro-Nanotechnology for Space Applications, Houston, TX, 1995 (Proceeding to be published).

4. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content

5. 7. Ho I. H. and Stringfellow G. B. (unpublished results).

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