Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics-Reference-Cited by-同舟云学术

Combined impact of B2H6 flow and growth temperature on morphological, structural, optical, and electrical properties of MOCVD-grown B(In)GaAs heterostructures designed for optoelectronics

Published:2022-03 Issue: Volume:577 Page:151884
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hidouri Tarek,Parisini Antonella,Ferrari Claudio^ORCID,Orsi Davide^ORCID,Baraldi Andrea,Vantaggio Salvatore^ORCID,Nasr Samia^ORCID,Bosio Alessio,Pavesi Maura,Saidi Faouzi,Fornari Roberto

Funder

Ministero degli Affari Esteri e della Cooperazione Internazionale

Deanship of Scientific Research, King Faisal University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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4. T.L. Aselage et D. Emin, Brevet US n° : 6, 479,919. 12 novembre 2002.

5. Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method;Hamila;Int. J. Appl. Phys.,2012

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