Flaw states in processed GaAs, detected by photoconductive and photo field‐effect techniques
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335413
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1. Photo-induced current measurement for the characterized of deep-level traps in lattice-matched MODFETs on InP substrate;Solid-State Electronics;1992-08
2. Electrical activation of silicon coimplanted with nitrogen, phosphorus, or arsenic in semi‐insulating GaAs substrates grown by the liquid encapsulated Czochralski method;Journal of Applied Physics;1988-08-15
3. Deep levels in CdTe;Journal of Crystal Growth;1988-01
4. Electrical activation of silicon implanted in semi‐insulating GaAs: Role of boron and the midgap electron trap (EL2);Journal of Applied Physics;1987-11
5. GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations;Applied Physics Letters;1985-09-15
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