GaAs field‐effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96085
Reference12 articles.
1. Electron traps in bulk and epitaxial GaAs crystals
2. Experimental requirements for quantitative mapping of midgap flaw concentration in semi‐insulating GaAs wafers by measurement of near‐infrared transmittance
3. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
4. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
5. Threshold voltage scattering of GaAs MESFET's fabricated on LEC-grown semi-insulating substrates
Cited by 50 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018
2. Neural network modeling of GaAs IC material and MESFET device characteristics;International Journal of RF and Microwave Computer-Aided Engineering;1999-05
3. Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy;Solid-State Electronics;1998-04
4. Non-contacting spatially resolved measurements of Fermi energy and photoconductivity in semi-insulating undoped GaAs and InP:Fe;Materials Science and Engineering: B;1997-02
5. Effects of intracavity dispersion on the starting dynamics of continuous-wave passively mode-locked Ti:sapphire/DDI lasers;Optics Letters;1996-07-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3