Formation of edge misfit dislocations in GexSi1−x(x∼0.4–0.8) films grown on misoriented (001)→(111) Si substrates: Features before and after film annealing-Reference-Cited by-同舟云学术

Formation of edge misfit dislocations in GexSi1−x(x∼0.4–0.8) films grown on misoriented (001)→(111) Si substrates: Features before and after film annealing

Published:2010-06-15 Issue:12 Volume:107 Page:123521
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bolkhovityanov Yu. B.,Deryabin A. S.,Gutakovskii A. K.,Sokolov L. V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3446296

Reference11 articles.

1. Variation of dislocation morphology with strain in GexSi1−x epilayers on (100)Si

2. Mechanism for the formation of 90° dislocations in high‐mismatch (100) semiconductor strained‐layer systems

3. Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

4. Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value

5. Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)

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2. Unexpected travel of Lomer-type dislocations in Ge/GexSi1-x/Si(001) heterostructures;Thin Solid Films;2016-10

3. Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.510 nm/Si(001) as an example;Philosophical Magazine Letters;2016-08-24

4. Control of symmetric properties of metamorphic In 0.27 Ga 0.73 As layers by substrate misorientation;Chinese Physics B;2016-03

5. Specific features of plastic relaxation of a metastable Ge x Si1 − x layer buried between a silicon substrate and a relaxed germanium layer;Physics of the Solid State;2014-02