Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy
2. Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer
3. Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density
4. Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers
5. Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates
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1. A dislocation-driven laminated relaxation process in Si1−xGex grown on Si (001) by molecular beam epitaxy;Materials Today Nano;2021-12
2. In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique;Semiconductors;2019-09
3. Carbon-mediated epitaxy of SiGe virtual substrates on Si(001);Semiconductor Science and Technology;2018-10-04
4. Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates;Journal of Crystal Growth;2017-01
5. Thin single-crystal Ge layers on 2″ Si substrates;Technical Physics Letters;2015-01
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