Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference6 articles.
1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
2. High electron mobility in modulation‐doped Si/SiGe
3. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
4. Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
5. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
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2. Transmission electron microscopy dislocation study of Ge-on-Si films supporting a new lattice-mismatch relaxation mechanism;Journal of Applied Physics;2020-02-21
3. Carrier lifetime enhancement in halide perovskite via remote epitaxy;Nature Communications;2019-09-12
4. Investigation of GexSi1 –x/Si Nanoheterostructures Grown by Ion-Beam Deposition;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-05
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