Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350803
Reference26 articles.
1. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
2. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
3. High electron mobility in modulation‐doped Si/SiGe
4. Electron resonant tunneling in Si/SiGe double barrier diodes
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