Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119132
Reference19 articles.
1. Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
2. High hole mobility in SiGe alloys for device applications
3. High electron mobility in modulation‐doped Si/SiGe
4. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures
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