Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures-Reference-Cited by-同舟云学术

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Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

Published:1994-12-19 Issue:25 Volume:73 Page:3447-3450
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Ismail K.,LeGoues F. K.,Saenger K. L.,Arafa M.,Chu J. O.,Mooney P. M.,Meyerson B. S.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.73.3447/fulltext

Reference12 articles.

1. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy

2. High electron mobility in modulation‐doped Si/SiGe

3. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

4. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy

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